Selected Publications

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Journals

SiC - Bulk growth, isnsitu visualization, modeling, characterization, epitaxy

  • Peter Wellmann, Georg Neubauer, Lars Fahlbusch, Michael Salamon,Norman Uhlmann; Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping, Cryst. Res. Technol. 50, No. 1, 2-9 (2015) / DOI 10.1002/crat.201400216

  • M. Syväjärvi, J. Müller, J.W. Sun, V. Grivickas, Y. Ou, V. Jokubavicius, P. Hens, M. Kaisr, K. Ariyawong, K. Gulbinas, R. Liljedahl, M. K. Linnarsson, S. Kamiyama, P. Wellmann, E. Spiecker and H. Ou; Fluorescent SiC as a new material for white LEDs; Physica Scripta Phys. Scr. T148 (2012) 014002 (5pp) doi:10.1088/0031-8949/2012/T148/014002

  • P.J. Wellmann and M. Pons; Numerical modeling and experimental verification of Modified-PVT crystal growth of SiC; J.Cryst.Growth, 303, p.337 (2007)

  • P. Wellmann, P. Desperrier, R. Mueller, T. Straubinger, A. Winnacker, F. Baillet, E. Blanquet, J.M. Dedulle, and M. Pons; SiC single crystal growth by a modified physical vapor transport technique; J.Cryst.Growth, 275(1-2), p. e555-e560 (2005)

  • R. Weingärtner, P.J. Wellmann, M. Bickermann, D. Hofmann, T.L. Straubinger, and A. Winnacker; Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements; Appl.Phys.Lett. 80(1), p. 70 (2002)

  • P.J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T.L. Straubinger and A. Winnacker; In-situ visualization and analysis of silicon carbide physical vapor transport growth using digital x-ray imaging; J.Cryst.Growth 216, p.263 (1999)

Thin Films - CISGSSe and CZTSSe

  • André Zweschke, Peter J. Wellmann, Numerical Reactive Diffusion Modeling of Stacked Elemental Layer Rapid Thermal Annealed Chalcopyrite Absorber Layer Formation, Thin Solid Films 582 (2015) 397–400, DOI:10.1016/j.tsf.2014.11.002

  • Rachmat Adhi Wibowo, Stefan Moeckel , Hyesun Yoo  Astrid Hoelzing , Peter Wellmann, Rainer Hock; Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films; accepted for publication in Materials Chemistry and Physics(2013) doi: 10.1016/j.matchemphys.2013.07.021

  • Stefan A. Möckel, Astrid Hölzing, Rainer Hock, Peter J. Wellmann; In-situ phase formation study of CIS absorber layers from CuIn-nanoparticle and evaporated selenium; Thin Solid Films 535 (2013) 133-137

  • Ulrike Künecke, Stefan Jost, Robert Lechner, Helmut Vogt, Andreas Heiß, Jörg Palm, Peter Wellmann; SEM examination of the impact of laser patterning on microscopic inhomogeneities of RTP processed Cu(In,Ga)(Se,S)2 absorbers; Thin Solid Films 535 (2013) 97-10

Thin Films - CZTSSe

  • Ilja Maksimenko,  Daniel Kilian, Christian Mehringer, Michael Voigt, Wolfgang Peukert, Peter J. Wellmann; Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid; J. Appl. Phys. 110, . 104301 (2011)

  • Ilja Maksimenko, Peter Wellmann; Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives; Thin Solid Films 520, p.  1341–1347 (2011)

  • Michael Gross, Albrecht Winnacker, Peter J. Wellmann; Electrical, Optical and Morphological Properties of Nanoparticle Indium-Tin-Oxide Layers; Thin Solid Film515, p. 8567–8572 (2007)

Hybride Ferromagnet Semiconductor Structures

  • P.J. Wellmann, J.M. Garcia, J.-L. Feng and P.M. Petroff; Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnets hybrid structure; Appl.Phys.Lett. 73(22); p.3291 (1998)

  • P.J. Wellmann, J.M. Garcia, J.-L. Feng and P.M. Petroff; Formation of Nanoscale Ferromagnetic MnAs Crystallites in Low-Temperature Grown GaAs; Appl.Phys.Lett., 71(17); p.2532 (1997)

Self-Assembled InAs Quantum Dots

  • P.J. Wellmann, W.V. Schoenfeld, J.M. Garcia and P.M. Petroff; Tuning of electronic states in self assembled InAs quantum dots using an ion implantation technique; J.Electronic Materials, 27(9); p.1030 (1998)

Rare Earth Doped Semiconductors

  • P. Wellmann, G. Pensl and A. Winnacker; On the excitation mechanism of Erbium and Ytterbium in the quaternary compounds InGaAsP; Mat.Res.Soc.Symp.Proc., Vol. 422; p.255 (1996)

Books

  • Peter J. Wellmann, Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung; Berichte aus der Halbleitertechnik; Habilitationsschrift Universität Erlangen-Nürnberg; Shaker Verlag, Aachen 2001

Peter Wellmann, Georg Neubauer, Lars Fahlbusch, Michael Salamon,

Norman Uhlmann; Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping, Cryst. Res. Technol. 50, No. 1, 2-9 (2015) / DOI

10.1002/crat.201400216